CMOS Transistors under Uniaxial Stress on Ultra-Thin Chips for Applications in Bendable Image Sensors
CMOS Transistors under Uniaxial Stress on Ultra-Thin Chips for Applications in Bendable Image Sensors
复制标题
用于可弯曲图像传感器的超薄芯片上单轴应力下的 CMOS 晶体管
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
A. Grabmaier
中科院分区：
文献类型：
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作者：
J. Haefner;W. Mokwa;G. Dogiamis;B. Hosticka;A. Grabmaier
在这项工作中，讨论了镶嵌在聚酰亚胺薄膜中的超薄硅片上的cmos晶体管的特性。给出了减薄和封装工艺，并实验测定了n-晶体管和PMOS晶体管的压阻系数。此外，还研究了阈值电压和亚阈值斜率与单轴拉应力和压应力的关系。柔性超薄硅片；单轴应力；弯曲机；压阻；叠片
In this work characteristics of CMOS transistors on ultra-thin silicon chips embedded into a polyimide foil are discussed. The thinning and the encapsulation processes are presented and the piezoresistive coefficients of both n- and pMOS transistors are experimentally determined. Moreover, the dependence of the threshold voltage and subthreshold slope on uniaxial tensile and compressive stress is examined. Keywords - flexible ultra-thin silicon chips; uniaxial stress; bending machine;piezoresistance; chip-in-foil