The Impact of Dislocation on Bulk -Si FinFET Technologies: Physical Modeling of Strain Relaxation and Enhancement by Dislocation

The Impact of Dislocation on Bulk -Si FinFET Technologies: Physical Modeling of Strain Relaxation and Enhancement by Dislocation
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DOI：
10.1109/nmdc.2018.8605736
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发表时间：
2018-10
期刊：
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)
影响因子：
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通讯作者：
Jeong-Guk Min;C. Jeong;U. Kwon;D. Kim;Suhyun Kim;Ilryoung Kim;Joon-Sung Yang
Jeong-Guk Min;C. Jeong;U. Kwon;D. Kim;Suhyun Kim;Ilryoung Kim;Joon-Sung Yang
中科院分区：
其他
文献类型：
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作者：
Jeong-Guk Min;C. Jeong;U. Kwon;D. Kim;Suhyun Kim;Ilryoung Kim;Joon-Sung Yang

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利用扫描莫尔条纹（SMF）和扫描透射电子显微镜-几何相位分析（STEM-GPA）验证的三维TCAD模型，研究了eSiGe中位错应力记忆技术（DSMT）的最佳位置，以及eSiGe中的层错（SF）数、[Ge]浓度极限和p-FinFET直流折衷，以最大化n-FinFET性能。
The optimal position of dislocation stress memorization technique (DSMT) to maximize n-FinFET performance as well as the stacking fault (SF) number, [Ge] concentration limit and p-FinFET DC tradeoff in eSiGe are newly investigated by using the scanning moiré fringe (SMF) and scanning transmission electron microscopy-geometrical phase analysis (STEM-GPA) validated in-house 3D TCAD model in various bulk finFET structures.