Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
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浅沟槽隔离相对于硅局部氧化在对准公差方面的优势
DOI：
10.1143/jjap.38.l234
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发表时间：
1999
影响因子：
1.5
通讯作者：
Y. Tokuda
中科院分区：
文献类型：
--
作者：
K. Shiozawa;T. Oishi;K. Sugihara;A. Furukawa;Y. Abe;Y. Tokuda
我们研究了浅沟槽隔离（STI）和硅局部氧化（LOCOS）对接触孔刻蚀的击穿特性之间的差异。尽管STI的击穿电压变化可以忽略不计，尽管大的接触重叠，由于与接触孔的轻微重叠的LOCOS的隔离特性急剧下降。横截面扫描电子显微镜观察表明，STI和LOCOS之间的显着差异是密切相关的接触孔蚀刻修改的场氧化物的形状。我们的结论是STI，其中原始的场氧化物突然项目以上的衬底表面，具有优势的LOCOS不仅对隔离空间的减少，但也对准公差减少。
We investigate the differences between the breakdown characteristics against contact hole etching for shallow trench isolation (STI) and the local oxidation of silicon (LOCOS). Although the breakdown voltage of STI varied negligibly despite the large contact overlap, the isolation characteristics of the LOCOS were drastically degraded due to the slight overlapping with the contact hole. The cross-sectional scanning electron microscope observations revealed that the considerable difference between STI and the LOCOS is closely related to the field oxide shapes modified by contact hole etching. We concluded that STI, in which the original field oxide abruptly projects above the substrate surface, has an advantage over the LOCOS not only against isolation space reduction but also alignment tolerance reduction.