Solidification paths and carbide morphologies in melt-processed MoSi2-SiC In Situ composites
Solidification paths and carbide morphologies in melt-processed MoSi2-SiC In Situ composites
复制标题
熔融加工 MoSi2-SiC 原位复合材料的凝固路径和碳化物形态
DOI:
10.1007/s11661-997-0119-1
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发表时间:
1997
期刊:
影响因子:
--
通讯作者:
C. Levi
中科院分区:
文献类型:
--
作者:
D. Tilly;J. Löfvander;C. Levi
The present investigation was undertaken to elucidate the microstructural evolution of MoSi2-SiCin situcomposites produced by melt processing. An assessment of the existing liquidus projection was performed by a combination of thermodynamic modeling, analysis of solidification microstructures, and measurements of the thermal history during solidification. Results show that the quasibinary MoSi2-SiC eutectic occurs at ∼2 at. pct C and 2283 K, rather than 8 at. pct C and 2173 K, as previously reported. The ensuing L+MoSi2+SiC monovariant line runs almost parallel to the SiMoSi2binary and terminates at a ternary L ↔ Si+MoSi2+SiC eutectic calculated at 1.5Mo-0.84C (at. pct) and ∼1670 K. The maximum amount of SiC that may be produced by solidification along the quasibinary isopleth is ∼37 vol pct, of which ∼35 vol pct grows as primary. Analysis of solidification microstructures shows SiC grows with the cubicβpolytype structure (B3), while MoSi2grows with the tetragonal C11bstructure. Primary SiC may grow as equiaxed particles, platelets, and hopper crystals. Coupled growth with MoSi2leads to SiC in the shape of thin ribbons, sheets, and needles. The facets of the SiC crystals were identified to be of the {111} and {002} type, in agreement with the periodic bond chain analysis. The predominant platelike morphology was shown to develop due to a re-entrant twin mechanism similar to that observed in Si and Ge.