Probing Charge Transfer at Surfaces Using Graphene Transistors
Probing Charge Transfer at Surfaces Using Graphene Transistors
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DOI：
10.1021/nl103015w
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发表时间：
2011-01-01
期刊：
影响因子：
10.8
通讯作者：
Martel, Richard
中科院分区：
文献类型：
--
作者：
Levesque, Pierre L.;Sabri, Shadi S.;Martel, Richard
石墨烯场效应晶体管（FET）对气体暴露极其敏感。通过大气气体对石墨烯FET进行电荷转移掺杂是普遍存在的，但尚未被理解。我们已经使用石墨烯FET来探测在高纯度气体暴露实验期间电化学电势的微小变化。我们的研究定量地表明，涉及吸附水，石墨烯和基板的电化学是负责掺杂。我们不仅确定了水/氧氧化还原电对的基本机制，但也捕捉这个反应的动力学。石墨烯PET在这里被强调为一种非常灵敏的电位计，用于探测界面处的电化学反应，这是由石墨烯的独特状态密度引起的。这项工作建立了一个基本的基础上，可以开发新的电化学纳米探针和气体传感器与石墨烯。
Graphene field effect transistors (FETs) are extremely sensitive to gas exposure. Charge transfer doping of graphene FETs by atmospheric gas is ubiquitous but not yet understood. We have used graphene FETs to probe minute changes in electrochemical potential during high-purity gas exposure experiments. Our study shows quantitatively that electrochemistry involving adsorbed water, graphene, and the substrate is responsible for doping. We not only identify the water/oxygen redox couple as the underlying mechanism but also capture the kinetics of this reaction. The graphene PET is highlighted here as an extremely sensitive potentiometer for probing electrochemical reactions at interfaces, arising from the unique density of states of graphene. This work establishes a fundamental basis on which new electrochemical nanoprobes and gas sensors can be developed with graphene.