A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal–Insulator Transition
A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal–Insulator Transition
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通过电场诱导离子传输构建的一维二氧化钒纳米通道及其优异的金属-绝缘体转变
DOI：
10.1002/adma.201702162
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发表时间：
2017
影响因子：
29.4
通讯作者：
Run-Wei Li
中科院分区：
文献类型：
--
作者：
Wuhong Xue;Gang Liu;Zhicheng Zhong;Yuehua Dai;Jie Shang;Yiwei Liu;Huali Yang;Xiaohui Yi;Hongwei Tan;Liang Pan;Shuang Gao;Jun Ding;Xiao-Hong Xu;Run-Wei Li
材料物理化学性质的纳米尺度操纵为开发具有超小尺寸、快速操作速度和低能耗特性的新型电子器件提供了独特的可能性。这是特别重要的，因为目前的半导体制造技术在不久的将来接近小型化运动的终点。本文首次报道了在V2 O 5薄膜中通过电场诱导氧离子迁移过程构建的一维VO 2纳米通道的上级金属-绝缘体转变（MIT）。在VO 2纳米通道器件中，证明了一种尖锐而可靠的MIT转变，具有<0.5 mV dec−1的陡峭导通电压斜率、17 ns的快速开关速度、8 pJ的低能耗和<4.3%的低可变性。高分辨透射电子显微镜观察和理论计算表明，该器件的上级电学性能是由于在V2 O 5薄膜中电铸形成了纳米级的VO 2纳米通道。更重要的是，将本器件结合到Pt/HfO 2/Pt/VO 2/Pt 1 S1 R单元中，可以确保HfO 2存储器连续107个周期的正确阅读，因此证明了其作为高密度交叉存储器阵列中的可靠选择器的巨大可能性。
Nanoscale manipulation of materials' physicochemical properties offers distinguished possibility to the development of novel electronic devices with ultrasmall dimension, fast operation speed, and low energy consumption characteristics. This is especially important as the present semiconductor manufacturing technique is approaching the end of miniaturization campaign in the near future. Here, a superior metal–insulator transition (MIT) of a 1D VO2nanochannel constructed through an electric‐field‐induced oxygen ion migration process in V2O5thin film is reported for the first time. A sharp and reliable MIT transition with a steep turn‐on voltage slope of <0.5 mV dec−1, fast switching speed of 17 ns, low energy consumption of 8 pJ, and low variability of <4.3% is demonstrated in the VO2nanochannel device. High‐resolution transmission electron microscopy observation and theoretical computation verify that the superior electrical properties of the present device can be ascribed to the electroformation of nanoscale VO2nanochannel in V2O5thin films. More importantly, the incorporation of the present device into a Pt/HfO2/Pt/VO2/Pt 1S1R unit can ensure the correct reading of the HfO2memory continuously for 107cycles, therefore demonstrating its great possibility as a reliable selector in high‐density crossbar memory arrays.