Characterizing the effects of free carriers in fully etched, dielectric-clad silicon waveguides
Characterizing the effects of free carriers in fully etched, dielectric-clad silicon waveguides
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DOI：
10.1063/1.4922734
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发表时间：
2015-06-15
影响因子：
4
通讯作者：
Fainman, Yeshaiahu
中科院分区：
文献类型：
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作者：
Sharma, Rajat;Puckett, Matthew W.;Fainman, Yeshaiahu
我们从理论上描述了自由载流子等离子体色散效应在完全蚀刻的硅波导，与各种介质材料包层，由于固定的界面电荷和陷阱状态在硅-介质界面。用于这些电荷的值是从测量的SiO2，SiNx，和Al 2 O3薄膜沉积在硅基板上的电容-电压特性。然后使用半导体物理工具Silvaco结合时域有限差分法求解器Lumerical计算电荷对硅波导特性的影响。我们的研究结果表明，除了作为一个关键因素，在分析这种有源器件的电容驱动的硅调制器，这种效果也应该考虑到当考虑无源硅波导的传播损耗。(C)2015 AIP Publishing LLC.
We theoretically characterize the free-carrier plasma dispersion effect in fully etched silicon waveguides, with various dielectric material claddings, due to fixed interface charges and trap states at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides. (C) 2015 AIP Publishing LLC.