Electroluminescence of 2,4-bis(4-(2′-thiophene-yl)phenyl)thiophene in organic light-emitting field-effect transistors
Electroluminescence of 2,4-bis(4-(2′-thiophene-yl)phenyl)thiophene in organic light-emitting field-effect transistors
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DOI：
10.1063/1.1870105
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发表时间：
2005-02
影响因子：
4
通讯作者：
Takahito Oyamada;H. Sasabe;C. Adachi;Suguru Okuyama;N. Shimoji;K. Matsushige
中科院分区：
文献类型：
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作者：
Takahito Oyamada;H. Sasabe;C. Adachi;Suguru Okuyama;N. Shimoji;K. Matsushige
本文报道了2，4-双（4-（2′-噻吩基）苯基）噻吩（TPTPT）作为有机场效应晶体管（OFET）有源层的电致发光（EL）。特别地，具有dSD=0.8μm的短沟道的OFET表现出比具有长得多的沟道（dSD=9.8μm）的OFET更高的EL效率。在源漏电压Vd=− 100 V和栅电压Vg=− 40 V时，我们观察到短沟道长度器件的最大EL量子效率（ηmax）为6.4×10−3%。从OFET特性来看，尽管TPTPT层表现出典型的p型操作，但EL的发生清楚地表明在高Vd和Vg下分别从源极和漏极电子器件同时注入空穴和电子。
We succeeded in observing electroluminescence (EL) of 2,4-bis(4-(2′-thiophene-yl)phenyl)thio-phene (TPTPT) as an active layer in an organic field-effect transistor (OFET). In particular, an OFET with a short channel of dSD=0.8μm demonstrated higher EL efficiency than one with a much longer channel (dSD=9.8μm). We observed a maximum EL quantum efficiency (ηmax) of 6.4×10−3% in the short-channel-length device at an applied source-drain voltage of Vd=−100V and a gate voltage of Vg=−40V. From the OFET characteristics, although the TPTPT layer demonstrated typical p-type operation, the occurrence of EL clearly indicated simultaneous hole and electron injection from the source and drain electronics, respectively, under high Vd and Vg.