LOW-FIELD INHOMOGENEITY-INDUCED MAGNETORESISTANCE IN SILICON
LOW-FIELD INHOMOGENEITY-INDUCED MAGNETORESISTANCE IN SILICON
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DOI：
10.1142/s2010324712500026
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发表时间：
2012-04
期刊：
影响因子：
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通讯作者：
Xiaozhong Zhang;C. Wan
中科院分区：
文献类型：
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作者：
Xiaozhong Zhang;C. Wan
我们发现，通过少数载流子的注入可以显著地增强轻掺杂硅中的非均匀感生磁阻(IMR)，然后通过外加电流进行调谐，使其在低磁场处开始。我们设计了一种IMR器件，其不均匀性是由导电分别由少数载流子和多数载流子主导的区域之间形成的p-n边界提供的；施加磁场使边界区域的电流发生扭曲，从而产生大的磁电阻。我们的IMR器件在低场下的室温场灵敏度显著提高，在0.07T和0.2T时磁阻分别达到10%和100%，接近商业巨磁电阻器件的性能。对低磁场的高灵敏度和大的高场响应相结合，应该会使该器件的概念对磁场传感行业具有吸引力。此外，基于传统的硅平台，应该可以与现有的硅器件集成，从而有助于硅基磁电子学的发展。
We show that inhomogeneity-induced magnetoresistance (IMR) in lightly doped silicon can be significantly enhanced through the injection of minority charge carriers, and then tuned by an applied current to have an onset at low magnetic fields. We designed an IMR device in which, the inhomogeneity is provided by the p–n boundary formed between regions where conduction is dominated by the minority and majority charge carriers respectively; application of a magnetic field distorts the current in the boundary region, resulting in large magnetoresistance. The room-temperature field sensitivity of our IMR device at low fields was remarkably improved, with magnetoresistance reaching 10% at 0.07 T and 100% at 0.2 T, approaching the performance of commercial giant magnetoresistance devices. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, being based on a conventional silicon platform, it should be possible to integrate with existing silicon devices and so aid the development of silicon-based magnetoelectronics.