Valley spin polarization by using the extraordinary Rashba effect on silicon
Valley spin polarization by using the extraordinary Rashba effect on silicon
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DOI：
10.1038/ncomms3073
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发表时间：
2013-06-01
影响因子：
16.6
通讯作者：
Oda, Tatsuki
中科院分区：
文献类型：
--
作者：
Sakamoto, Kazuyuki;Kim, Tae-Hwan;Oda, Tatsuki
在二维自旋极化电子系统中增加山谷自由度，为下一代器件的功能倍增提供了机会。然而，到目前为止，由于很难使山谷极化，这种装置还没有实现，这是激活这种自由度不可或缺的一步。在这里，我们展示了在具有C-3对称性的系统上利用Rashba效应形成100%自旋极化谷的简单易行的方法。这种极化比普通Rashba系统中的极化要高得多，导致山谷充当滤光器，可以抑制自旋电荷的后向散射。本系统是在硅衬底上形成的，为高效实现硅自旋电子器件开辟了一条新的途径。
The addition of the valley degree of freedom to a two-dimensional spin-polarized electronic system provides the opportunity to multiply the functionality of next-generation devices. So far, however, such devices have not been realized due to the difficulty to polarize the valleys, which is an indispensable step to activate this degree of freedom. Here we show the formation of 100% spin-polarized valleys by a simple and easy way using the Rashba effect on a system with C-3 symmetry. This polarization, which is much higher than those in ordinary Rashba systems, results in the valleys acting as filters that can suppress the backscattering of spin-charge. The present system is formed on a silicon substrate, and therefore opens a new avenue towards the realization of silicon spintronic devices with high efficiency.