Focused ion beam and field-emission microscopy of metallic filaments in memory devices based on thin films of an ambipolar organic compound consisting of oxadiazole, carbazole, and fluorene units
Focused ion beam and field-emission microscopy of metallic filaments in memory devices based on thin films of an ambipolar organic compound consisting of oxadiazole, carbazole, and fluorene units
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DOI：
10.1063/1.4808026
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发表时间：
2013-05
影响因子：
4
通讯作者：
C. Pearson;L. Bowen;M. Lee;Alison L. Fisher;Katherine E. Linton;M. Bryce;M. Petty
中科院分区：
文献类型：
--
作者：
C. Pearson;L. Bowen;M. Lee;Alison L. Fisher;Katherine E. Linton;M. Bryce;M. Petty
我们报告了基于由恶二唑、咔唑和芴单元组成的双极性化合物的有机薄膜电阻存储架构的工作机制。在施加电压之前和之后，通过电子显微镜对器件的横截面进行成像。显微照片显示金属阴极上直径为 50 nm-100 nm 的细丝的生长。我们认为这些是由铝离子从阳极漂移形成的，并且是在存储器件中观察到的开关和负微分电阻现象的原因。
We report on the mechanism of operation of organic thin film resistive memory architectures based on an ambipolar compound consisting of oxadiazole, carbazole, and fluorene units. Cross-sections of the devices have been imaged by electron microscopy both before and after applying a voltage. The micrographs reveal the growth of filaments, with diameters of 50 nm–100 nm, on the metal cathode. We suggest that these are formed by the drift of aluminium ions from the anode and are responsible for the observed switching and negative differential resistance phenomena in the memory devices.