Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
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DOI：
10.1063/1.3373610
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发表时间：
2010-03
影响因子：
4
通讯作者：
M. Schubert;E. Schubert
中科院分区：
文献类型：
--
作者：
M. Schubert;E. Schubert
采用k-ε p量子透射边界方法计算了GaInN/GaN量子阱威尔斯上方电子和空穴的停留时间。长的停留时间是量子阱捕获载流子的高概率的指示。相反，减少的停留时间指示载波可能跨井相干地传输。结果表明，在GaInN/GaN异质界面和窄量子阱的片电荷导致载流子停留时间显着减少。此外，载波捕获讨论的一个经典的模型，是与停留时间计算一致。
The dwell time of electrons and holes above GaInN/GaN quantum wells is calculated using the k⋅p quantum transmitting boundary method. A long dwell time is an indication for high probability of carrier capture by the quantum well. Conversely, a reduced dwell time indicates that the carrier is likely to be coherently transported across the well. It is shown that sheet charges at GaInN/GaN heterointerfaces and a narrow quantum well lead to significant reductions in carrier dwell time. In addition, carrier capture is discussed in terms of a classical model that is consistent with dwell time calculations.