Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy
Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy
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DOI：
10.1063/1.4892525
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发表时间：
2014-08
影响因子：
4
通讯作者：
Qiang Jing;Guoguang Wu;Yuantao Zhang;Fubin Gao;X. Cai;Yang Zhao;Wancheng Li;G. Du
中科院分区：
文献类型：
--
作者：
Qiang Jing;Guoguang Wu;Yuantao Zhang;Fubin Gao;X. Cai;Yang Zhao;Wancheng Li;G. Du
The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.
