Charging and Coulomb staircase effects in silicon nanodisk structures fabricated by defect-free Cl neutral beam etching process
Charging and Coulomb staircase effects in silicon nanodisk structures fabricated by defect-free Cl neutral beam etching process
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DOI：
10.1063/1.2404608
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发表时间：
2006-12
影响因子：
4
通讯作者：
T. Kubota;T. Hashimoto;Y. Ishikawa;S. Samukawa;A. Miura;Y. Uraoka;T. Fuyuki;M. Takeguchi;K. Nishioka;I. Yamashita
中科院分区：
文献类型：
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作者：
T. Kubota;T. Hashimoto;Y. Ishikawa;S. Samukawa;A. Miura;Y. Uraoka;T. Fuyuki;M. Takeguchi;K. Nishioka;I. Yamashita
采用Cl中性束刻蚀法，在1.4 - 3-nm厚的SiO2上刻蚀3.5 - 4 nm厚的多晶硅，并采用直径为7 nm的铁蛋白铁芯掩膜，在SiO2薄膜上精确制备了无缺陷纳米级硅盘。开尔文力显微镜观察表明，纳米片可以保持注入的正电荷和负电荷。此外，在25K的温度下，通过I-V测量纳米圆盘，观察到库仑阶梯。这些结果表明，本研究制备的纳米片具有精确的量子效应结构，并具有单电子性质。这一过程在未来量子效应器件的开发中具有很大的潜力。
A defect-free nanometer-scale silicon disk (nanodisk) on thin SiO2 film was precisely fabricated by using Cl neutral beam etching of a 3.5–4-nm-thick polycrystalline silicon on 1.4–3-nm-thick underlying SiO2 with a 7-nm-diameter ferritin iron core mask. Kelvin force microscope observations revealed that nanodisks could maintain injected positive and negative charges. Additionally, Coulomb staircases were observed by I-V measurement of a nanodisk at a temperature of 25K. These results indicate that the nanodisk fabricated in this research had a precise quantum effect structure and attained the single electron property. This process has great potential in the development of future quantum effect devices.