Ordering distance of surface nanofacets on vicinal 4H-SiC(0001).
Ordering distance of surface nanofacets on vicinal 4H-SiC(0001).
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DOI：
10.1103/physrevlett.99.016102
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发表时间：
2007-07
影响因子：
8.6
通讯作者：
M. Fujii;Satoru Tanaka
中科院分区：
文献类型：
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作者：
M. Fujii;Satoru Tanaka
经过高温 H2 蚀刻后，邻位 SiC(0001) 表面呈现出由 (0001) 和 (112n) 对组成的周期性有序纳米面结构。在这里，我们发现大约 10nm 的特征排序距离与邻近角度（4 度-8 度）无关。然而，排序距离的波动取决于邻近角度。偏离表面 5.7 度显示出优越的周期性。表面的经典弹性理论预测了特征（恒定）有序距离，但没有预测有序周期的波动。通过引入多晶型 SiC 特有的周期性表面能引起的“量子化阶跃聚束”，描述了波动。
After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112n). Here, we found that the characteristic ordering distance of approximately 10nm is independent of the vicinal angle (4 degrees -8 degrees off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7 degrees off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.