LOW TEMPERATURE DEPOSITION OF Pb(Zr,Ti)O3 THIN FILMS BY LIQUID DELIVERY MOCVD USING A COCKTAIL SOURCE WITH Pb(DMAMP)2, Zr(MMP)4 AND Ti(MMP)4
LOW TEMPERATURE DEPOSITION OF Pb(Zr,Ti)O3 THIN FILMS BY LIQUID DELIVERY MOCVD USING A COCKTAIL SOURCE WITH Pb(DMAMP)2, Zr(MMP)4 AND Ti(MMP)4
复制标题
使用含有 Pb(DMAMP)2、Zr(MMP)4 和 Ti(MMP)4 的混合源通过液体输送 MOCVD 低温沉积 Pb(Zr,Ti)O3 薄膜
DOI：
10.1080/10584580600663326
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发表时间：
2006
影响因子：
0.7
通讯作者：
T. Shiosaki
中科院分区：
文献类型：
--
作者：
Y. Otani;K. Uchiyama;S. Okamura;T. Shiosaki
摘要采用液体输送MOCVD法，以Pb（DMAMP）2、Zr（MMP）4和Ti（MMP）4为原料，加入ECH，制备了PZT铁电薄膜。该混合物溶液稳定至少3个月，并且在290°C以上完全蒸发。在400°C的衬底温度下，沉积的膜结晶成具有优选111取向的钙钛矿PZT相。我们认为，这种解决方案是适合在低衬底温度下的PZT沉积。
ABSTRACT Ferroelectric PZT thin films were deposited by liquid delivery MOCVD using a cocktail solution of Pb(DMAMP)2, Zr(MMP)4 and Ti(MMP)4 with ECH. This cocktail solution was stable at least 3 months and perfectly vaporized above 290°C. Deposited films were crystallized into perovskite PZT phase with preferred 111-orientation at the substrate temperature of 400°C. We believe that this solution is suitable for PZT deposition at a low substrate temperature.