Influence of sample inclination and rotation during ion‐beam etching on ion‐etched structures
Influence of sample inclination and rotation during ion‐beam etching on ion‐etched structures
复制标题
离子束蚀刻过程中样品倾斜和旋转对离子蚀刻结构的影响
DOI：
10.1116/1.569833
复制
发表时间：
1978
期刊：
影响因子：
--
通讯作者：
S. Hashimoto
中科院分区：
文献类型：
--
作者：
S. Hosaka;S. Hashimoto
研究了倾角和旋转对刻蚀特性的影响。倾斜和旋转是离子束刻蚀法的两个优点，因此我们特别感兴趣地研究了它们的影响。通过实验研究了试样倾角与溅射成品率、蚀刻速率和蚀刻系数的关系。研究了试样倾角对腐蚀系数的影响。此外，还发现在离子束刻蚀的情况下，通过控制试样的倾斜角度可以得到理想的刻蚀截面。这种蚀刻特性主要是由于掩膜材料的离子限制效应和基片的水平蚀刻速率特性。
Influences of inclination angle and rotation on etching characteristics are investigated. Inclination and rotation are two of the advantages of the ion‐beam etching method, therefore their influence is studied with particular interest. Experiments are carried out to examine the relation of sample inclination angle to the sputtering yield, etching rate, and etching factor of an etched cross section. The influence of the sample inclination angle on the etching factor is also studied. In addition, it is found that in the case of the ion‐beam etching method, the desired etched cross section can be obtained by controlling the sample inclination angle. This etching characteristic is due mainly to the ion‐restriction effect of the mask material and the horizontal etching rate characteristic to the substrate.