When is Si3N4 not Si3N4? When it is a Low Stress SiNx Membrane Window
When is Si3N4 not Si3N4? When it is a Low Stress SiNx Membrane Window
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什么时候Si3N4不是Si3N4？
DOI：
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发表时间：
2015
影响因子：
2.8
通讯作者：
N. Zaluzec
中科院分区：
文献类型：
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作者：
N. Zaluzec
SiN x 窗口已被广泛用作支持介质，可在 TEM/STEM 和 SEM 的广泛研究中轻松用于观察微观结构的演变。它是一种稳定的薄膜，通常生长在薄（100-300 µm 厚）硅框架的顶部。 SiN x 可以进行化学处理、加热，并且相对惰性。一般来说，这些薄膜是使用化学工艺生长的，并且可以常规且可重复地制成厚度范围为 10 nm 至 1000 nm 的薄膜。有多种化学合成方法可用于生长这些薄膜，其中包括：
The use of SiN x windows has been well established as a support media which can be readily employed to observe microstructural evolution during a wide range of studies in the TEM/STEM and SEM’s. It is a stable film which is usually grown on top of thin (100-300 µ m thick) Silicon frames. SiN x can be chemically treated, heated, and is relatively inert. Generally these films are grown using a chemical process and can be made routinely and reproducibly into films ranging from 10 nm to 1000 nm thick. There are a range of chemical synthesis methods which are used to grow these films which include: