TEM analysis of Ge-on-Si MOSFET structures with HfO 2 dielectric for high performance PMOS device technology
TEM analysis of Ge-on-Si MOSFET structures with HfO 2 dielectric for high performance PMOS device technology
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采用 HfO 2 电介质的 Ge-on-Si MOSFET 结构的 TEM 分析，用于高性能 PMOS 器件技术
DOI：
10.1088/1742-6596/209/1/012061
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Norris D
中科院分区：
文献类型：
--
作者：
Norris D
在本文中，我们提出了一种（扫描）透射电子显微镜分析的新型Ge-on-Si mosfet，它包含一个高k的hfo2电介质和TaN/TiN金属栅电极。这些器件的一个关键特征是在Ge虚拟衬底上掺入一层非常薄（~ 1nm）的Si钝化层，在沉积hfo2介电介质和TaN和TiN金属栅电极之前，该层部分氧化形成SiO2（~ 0.5 nm）。我们的结果证实了器件结构的结构和Si钝化的存在。
In this paper, we present a (scanning) transmission electron microscopy analysis of novel Ge-on-Si MOSFETs which incorporate a high-k HfO2dielectric and TaN/TiN metal gate electrodes. A key feature of these devices is the incorporation of a very thin (~ 1nm) Si passivation layer on top of the Ge virtual substrate, which is partially oxided to form SiO2(~ 0.5 nm), before depositing the HfO2dielectric and TaN and TiN metal gate electrodes. Our results confirm the architecture of the device structures and the existence of Si passivation.