Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell
Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell
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DOI：
10.1016/s0022-0248(99)00806-4
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发表时间：
2000-04
影响因子：
1.8
通讯作者：
Dawei Zhang;W. Shi;Haiqun Zheng;S. Yoon;C. Kam;Xuewen Wang
中科院分区：
文献类型：
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作者：
Dawei Zhang;W. Shi;Haiqun Zheng;S. Yoon;C. Kam;Xuewen Wang
