Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect
Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect
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DOI：
10.7566/jpsj.91.123703
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发表时间：
2022-08
影响因子：
1.7
通讯作者：
R. Ohashi;Ryota Nakai;T. Yokoyama;Yukio Tanaka;K. Nomura
中科院分区：
文献类型：
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作者：
R. Ohashi;Ryota Nakai;T. Yokoyama;Yukio Tanaka;K. Nomura
我们研究了Pfaffian分数量子霍尔态和整数量子霍尔态边缘之间的隧道输运。基于强隧穿和弱隧穿的对偶性论证，我们发现在强隧穿区域出现了类Andreev反射。我们计算了低电压极限下弱隧穿和强隧穿两种情况下的电荷电导。在弱隧道极限下，当偏置电压为$V$时，$Di}/dV$与$V^{1/nu}$成正比，且$\nu=1/2$。相反，在强隧道极限下，$Di/dv$由带修正项的$(e^{2}/h)2\nu/(1+\nu)$表示。我们期望在分数量子霍尔态($\nu=5/2$)和整数量子霍尔态($\nu=3$)的接触点上实现这个条件。
We studied the tunnel transport between the edge of a Pfaffian fractional quantum Hall state and that of an integer quantum Hall state. Based on the duality argument between the strong and weak tunnelings, we found that an Andreev-like reflection appeared in the strong tunneling regime. We calculated the charge conductance in the weak and strong tunneling regimes for the low-voltage limit. In the weak tunneling limit, $dI}/dV$ was proportional to $V^{1/\nu}$ with bias voltage $V$ and $\nu=1/2$. By contrast, in the strong tunneling limit, $dI/dV$ was expressed by $(e^{2}/h)2\nu/(1+\nu)$ with a correction term. We expect that this condition can be realized experimentally at the point contact between a fractional quantum Hall state with $\nu=5/2$ and an integer quantum Hall state with $\nu=3$.