Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
复制标题
通过同步辐射光电子能谱测量立方 GaN/GaAs 异质结的价带不连续性
DOI：
--
复制
发表时间：
1997
期刊：
影响因子：
--
通讯作者：
K. Ploog
中科院分区：
文献类型：
--
作者：
S. Ding;S. R. Barman;K. Horn;Hui Yang;B. Yang;O. Brandt;K. Ploog
用同步辐射角分辨光谱学测量了n型立方GaN/GaAs异质结的价带不连续性。利用氮等离子体辅助分子束外延技术在GaAs（100）衬底上生长出了高质量的氮化镓（GaN）立方薄膜，并通过核能级和价能级光谱的组合来确定其价带不连续。在GaN/GaAs异质结上得到ΔEV=(1.84±0.1)eV，这意味着该界面上导带的不连续非常小，因此可以实现GaN/GaAs异质结的垂直接触方案。
The valence band discontinuity of the n-type cubic GaN/GaAs heterojunction is measured by means of angle-resolved photoemission spectroscopy using synchrotron radiation. High quality cubic GaN films are grown on GaAs(100) substrates by nitrogen plasma-assisted molecular beam epitaxy, and the valence band discontinuity is determined by a combination of core and valence level spectra. A value of ΔEV=(1.84±0.1) eV across the GaN/GaAs heterojunction is obtained, which means that the discontinuity in the conduction bands at this interface is very small, such that a vertical contact scheme may be realized for GaN/GaAs heterojunctions.