Thermodynamic interpretation of quaternary (InGaAsP) layer uniformity grown by low‐pressure metalorganic vapor phase epitaxy
Thermodynamic interpretation of quaternary (InGaAsP) layer uniformity grown by low‐pressure metalorganic vapor phase epitaxy
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低压金属有机气相外延生长的四元 (InGaAsP) 层均匀性的热力学解释
DOI：
10.1063/1.108956
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
J. Zilko
中科院分区：
文献类型：
--
作者：
A. S. Jordan;A. Robertson;J. Zilko
根据最近的一项研究，当使用叔丁基膦（TBP）+AsH 3代替PH 3 + AsH 3或TBP+叔丁基胂（TBA）时，通过低压金属有机气相外延（LP-MOVPE）在50 mm直径的InP晶片上生长的四元（Q）In0.68Ga0.32As0.7P0.3层（λ=1.35 μm）的V族位置的成分不均匀性从3%降低到1%。在这封信中，我们提供了这些意见的热力学解释。在LP‐MOVPE条件下，在0.08 atm的总压力下，对于用H2稀释的完全分解的V族前体，我们表明，虽然主要物质是四聚体，但二聚体的浓度是显著的，并且随着温度（T）的升高而变得更加突出。检查的[As/P]比在气相中作为倒数T的函数，我们表明，在MOVPE范围内（900-950 K）的这些曲线的斜率从陡峭的变化到中等，然后几乎平坦的源AsH 3 + PH 3，TBA +TBP，和AsH 3 +TBP，分别。[As/P]的不敏感性
According to a recent study, the compositional nonuniformity for group V sites of quaternary (Q) In0.68Ga0.32As0.7P0.3 layers (λ=1.35 μm) grown by low‐pressure metalorganic vapor phase epitaxy (LP‐MOVPE) on 50 mm diam InP wafers was reduced from 3% to 1% when tertiary butyl phosphine (TBP)+AsH3 instead of PH3+AsH3 or TBP+tertiary butyl arsine (TBAs) were employed. In this letter we offer a thermodynamic interpretation of these observations. Under LP‐MOVPE conditions at a total pressure of 0.08 atm for fully decomposed group V precursors diluted with H2, we show that while the dominant species are the tetramers, the concentration of the dimers is significant and becomes more prominent with rising temperature (T). Examining the [As/P] ratio in the gas phase as a function of reciprocal T, we demonstrate that in the MOVPE range (900–950 K) the slope of these curves changes from steep to moderate and then nearly flat for the sources AsH3+PH3, TBAs+TBP, and AsH3+TBP, respectively. The insensitivity of the [As/P...