Temperature-mediated switching of magnetoresistance in Co-contacted multiwall carbon nanotubes

Temperature-mediated switching of magnetoresistance in Co-contacted multiwall carbon nanotubes
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共接触多壁碳纳米管中温度介导的磁阻切换

DOI:
10.1063/1.1597965
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发表时间:
2003
影响因子:
4
通讯作者:
K. Tsukagoshi
K. Tsukagoshi
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
S. Chakraborty;K. M. Walsh;B. Alphenaar;Lei Liu;K. Tsukagoshi

文献摘要

被引文献

相似文献

我们提出了铁磁接触的多壁纳米管的磁电阻随温度变化的测量。在低温下,由于接触磁化的不对准,电阻在零场附近急剧增加。随着温度的升高,电阻峰值转变为电阻下降,具有类似幅度的峰谷比,但符号相反。与背景磁阻相比,电阻开关具有明显的温度依赖性,表明两者具有不同的起源。我们提出,铁磁过渡附近的接触界面反转注入自旋的极性,并改变了电阻开关的符号。
We present temperature-dependent measurements of the magnetoresistance in ferromagnetically contacted multiwall nanotubes. At low temperature, the resistance increases sharply near zero-field due to misalignment of the contact magnetizations. As temperature increases, the resistance peak transforms into a resistance dip, with a peak-to-valley ratio of similar magnitude, but opposite sign. The resistance switch has a distinct temperature dependence compared with the background magnetoresistance, suggesting that the two have different origins. We propose that a ferromagnetic transition near the contact interfaces reverses the polarity of the injected spin, and changes the sign of the resistance switch.