Transmission Characteristics of Hydrogenated Microcrystalline Silicon Wire Waveguide at a Wavelength of 1.55 µm
Transmission Characteristics of Hydrogenated Microcrystalline Silicon Wire Waveguide at a Wavelength of 1.55 µm
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氢化微晶硅线波导在1.55 µm波长下的传输特性
DOI：
10.1143/apex.5.082501
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发表时间：
2012
影响因子：
2.3
通讯作者：
T. Kamei
中科院分区：
文献类型：
--
作者：
R. Takei;S. Manako;E. Omoda;Masao Suzuki;M. Mori;Y. Sakakibara;T. Kamei
我们提出氢化微晶硅（µc-Si：H）作为氢化非晶硅的替代品，用于光波导应用，具有更高的抗光致退化稳定性。在250 °C下，通过等离子体增强化学气相沉积法沉积了一层180 nm厚的µc-Si：H薄膜，其中含有晶粒尺寸为20 nm的硅纳米晶。宽度为420、470和570 nm的µc-Si：H线波导的传输损耗对于横向电模式分别为10.1、6.7和6.5 dB/cm，对于横向磁模式分别为9.6、5.2和4.7 dB/cm。根据测量的损耗，我们估计材料引起的散射损耗小于107 dB/cm。
We propose hydrogenated microcrystalline silicon (µc-Si:H) as an alternative to hydrogenated amorphous silicon for optical waveguide applications with higher stability against photoinduced degradation. A 180-nm-thick µc-Si:H film containing silicon nanocrystallites with a grain size of ∼20 nm was deposited by plasma-enhanced chemical vapor deposition at 250 °C. The transmission losses of µc-Si:H wire waveguides with widths of 420, 470, and 570 nm were 10.1, 6.7, and 6.5 dB/cm for the transverse electric mode, and 9.6, 5.2, and 4.7 dB/cm for the transverse magnetic mode, respectively. From the measured losses, we estimated material-induced scattering loss of less than ∼7 dB/cm.