Thermoluminescent Properties of Undoped and Ce-Doped Lutetium Orthosilicate and Yttrium Orthosilicate Single Crystals and Single Crystalline Films Scintillators
Thermoluminescent Properties of Undoped and Ce-Doped Lutetium Orthosilicate and Yttrium Orthosilicate Single Crystals and Single Crystalline Films Scintillators
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未掺杂和掺杂Ce原硅酸镥和原硅酸钇单晶和单晶薄膜闪烁体的热释光性质
DOI：
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发表时间：
2014
影响因子：
1.8
通讯作者：
J. Mares
中科院分区：
文献类型：
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作者：
A. Twardak;P. Bilski;Y. Zorenko;T. Zorenko;V. Gorbenko;E. Mandowska;A. Mandowski;O. Sidletskiy;J. Mares
本文对未掺杂和掺Ce的Lu 2SiO<sub>5</sub>（LSO）和Y2 SiO<sub>5</sub>（YSO）正硅酸盐单晶（SC）和单晶薄膜（SCF）的热释光性质进行了比较分析。<sub></sub><sub></sub>采用提拉法制备了SC样品，采用液相外延技术生长了SCF。结果表明，由于在SC中存在作为陷阱中心的基质缺陷（首先是氧空位），在SCF中形成Pb<sup>2+</sup>-Ce<sup>4+</sup><sup></sup>
In this work the comparative analysis of thermoluminescent properties of undoped and Ce-doped single crystals (SC) and single crystalline films (SCF) of Lu<sub>2</sub>SiO<sub>5</sub> (LSO) and Y<sub>2</sub>SiO<sub>5</sub> (YSO) orthosilicates were performed. The SC samples were prepared with the Czochralski method, and SCF were grown by the liquid phase epitaxy technique. We show that such different methods of material preparation resulted in different thermoluminescent properties of undoped and Ce<sup>3+</sup> doped LSO and YSO SC and SCF caused by the presence host defects (first of all, oxygen vacancies) as trapping centers in SC and formation of Pb<sup>2+</sup>-Ce<sup>4+</sup> pair centers in SCF.