Nonvolatile hydrogenated-amorphous-silicon thin-film-transistor memory devices
Nonvolatile hydrogenated-amorphous-silicon thin-film-transistor memory devices
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DOI：
10.1063/1.2356313
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发表时间：
2006-10
影响因子：
4
通讯作者：
Y. Kuo;Helinda Nominanda
中科院分区：
文献类型：
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作者：
Y. Kuo;Helinda Nominanda
制备并研究了一种悬浮栅n沟道非晶硅薄膜晶体管非易失性存储器件，该器件包括嵌入在SiNx栅介电层中的a-Si:H层。利用晶体管传输特性曲线的迟滞来证明其存储功能。在“0”和“1”状态之间实现了稳定的阈值电压变化。在写与擦除间隙为0.5V的情况下，电荷保持时间达到了bbb3600s。这种器件为a-Si:H薄膜晶体管带来了额外的功能，可以将其应用扩展到各个领域。
The floating gate n-channel amorphous-silicon thin-film transistor nonvolatile memory device, which includes an a-Si:H layer embedded in the SiNx gate dielectric layer, has been prepared and studied. The transistor’s hysteresis of transfer characteristic curves has been used to demonstrate its memory function. A steady threshold voltage change between the “0” and “1” states has been achieved. A large charge retention time of >3600s with the “write” and “erase” gap of 0.5V has been detected. This kind of device brings additional functions to the a-Si:H thin-film transistors, which can expand its application into various areas.