Uniaxial-stress effects on the magnetic properties of Si:P close to the metal-non-metal transition
Uniaxial-stress effects on the magnetic properties of Si:P close to the metal-non-metal transition
复制标题
单轴应力对接近金属-非金属转变的 Si:P 磁性能的影响
DOI：
10.1088/0953-8984/3/41/008
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
D. Tunstall
中科院分区：
文献类型：
--
作者：
P. Mason;D. Tunstall
用电子自旋共振技术研究了Si：P样品在15 mK ~ 4.2 K的温度范围内，在很低的磁场下，掺杂密度n使（n/nc）=0.85，其中nc是金属-非金属转变的临界密度。已经获得了一些结果，单轴应力施加到0.2 GPa，这意味着应力调谐效应移动（n/nc）接近0.9。结果表明，ESR线宽和电子自旋磁化率是成正比的，当温度变化时，在零应力，磁化率没有表现出“平坦化”的迹象，在低温下，在实验误差范围内，没有影响的应力对磁化率在这个样品。应力对线宽的影响也非常小。电子似乎表现得更像一个金属系统比以前的研究在Si：P在这个密度制度已经证明。
A sample of Si:P with a doping density n such that (n/nc)=0.85 at zero stress, where nc is the critical density for the metal-non-metal transition, has been studied at temperatures ranging from 15 mK up to 4.2 K using electron spin resonance techniques at very low magnetic fields. Some results have been obtained with uniaxial stress applied up to 0.2 GPa, implying a stress-tuning effect moving (n/nc) close to 0.9. The results indicate that the ESR linewidth and the electron spin susceptibility are proportional to one another when the temperature is varied at zero stress, that the susceptibility shows no sign of 'flattening off' at low temperature and that, within experimental error, there is no effect of stress on the magnetic susceptibility in this sample. The effect of stress on the linewidth is also anomalously small. The electrons appear to behave more like a metallic system than previous studies in Si:P in this density regime have demonstrated.