Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing
Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing
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DOI：
10.4028/www.scientific.net/msf.740-742.741
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发表时间：
2013-01
期刊：
影响因子：
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通讯作者：
Heiji Watanabe;Daisuke Ikeguchi;Takashi Kirino;Shuhei Mitani;Y. Nakano;Takashi Nakamura;T. Hosoi;T. Shimura
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文献类型：
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作者：
Heiji Watanabe;Daisuke Ikeguchi;Takashi Kirino;Shuhei Mitani;Y. Nakano;Takashi Nakamura;T. Hosoi;T. Shimura
我们报告了紫外光照射对热生长SiO2/4 H-SiC（0001）结构的有害影响及其在随后的热退火中的使用，以改善SiC-MOS器件的电学性能。正如我们之前报道的[1]，对于具有热生长氧化物的SiC-MOS器件，观察到显著的UV诱导损伤，例如正的平带电压偏移和电容-电压曲线中的滞后以及增加的界面态密度。有趣的是，随后的退火损坏的SiO2/SiC样品导致的上级电性能的那些未经处理的（新鲜的）设备。这些研究结果意味着，紫外线照射的SiO2/SiC结构是有效的引发预先存在的碳相关的缺陷，并将它们转化为一个简单的配置，可以很容易地通过热处理钝化。
We report on the harmful impact of ultraviolet (UV) light irradiation on thermally grown SiO2/4H-SiC(0001) structures and its use in subsequent thermal annealing for improving electrical properties of SiC-MOS devices. As we previously reported [1], significant UV-induced damage, such as positive flatband voltage shift and hysteresis in capacitance-voltage curves as well as increased interface state density, was observed for SiC-MOS devices with thermally grown oxides. Interestingly, the subsequent annealing of damaged SiO2/SiC samples resulted in superior electrical properties to those for untreated (fresh) devices. These findings imply that UV irradiation of the SiO2/SiC structure is effective for eliciting pre-existing carbon-related defects and transforming them into a simple configuration that can be easily passivated by thermal treatment.