In Situ Synthesis of Phosphorus-Doped Polymeric Carbon Nitride Sheets for Photoelectrochemical Water Oxidation
In Situ Synthesis of Phosphorus-Doped Polymeric Carbon Nitride Sheets for Photoelectrochemical Water Oxidation
复制标题
原位合成磷掺杂聚合物氮化碳片用于光电化学水氧化
DOI：
10.1002/solr.202000168
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发表时间：
2020-04-28
期刊：
影响因子：
7.9
通讯作者：
Wang, Xinchen
中科院分区：
文献类型：
--
作者：
Li, Xiaochun;Cheng, Zhang;Wang, Xinchen
聚合物氮化碳（PCN）的光电化学水氧化近年来受到越来越多的科学关注。本文通过原位聚合将磷(P)掺杂到PCN （P -PCN）薄膜中。p-PCN片在导电衬底上形成并垂直排列，用作光阳极。光阳极的最佳光电流密度约为120 μ A cm(-2)，是未掺杂光阳极的2倍以上。性能的提高被认为是在PCN中引入了P。一方面，P掺杂提高了PCN的价势，提高了其水氧化能力；另一方面，来自P的额外电荷改善了电荷传递。
Photoelectrochemical water oxidation by polymeric carbon nitride (PCN) has recently received increasing scientific interest. Herein, phosphorus (P) is doped into PCN (p-PCN) films through in situ polymerization. p-PCN sheets are formed and vertically aligned on a conductive substrate, which is used as a photoanode. The optimal photocurrent density of the photoanode is approximate to 120 mu A cm(-2), which is more than two times that of the undoped one. The improved performance is accounted as the introduction of P in PCN. On the one hand, P doping increases the valence potential of PCN and improves the ability of water oxidation. On the other hand, charge transfer is improved by extra charges from P.