High p-conductivity in AlGaN enabled by polarization field engineering
High p-conductivity in AlGaN enabled by polarization field engineering
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DOI：
10.1063/5.0143427
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发表时间：
2023-04
影响因子：
4
通讯作者：
S. Rathkanthiwar;P. Reddy;B. Moody;Cristyan Quiñones-García;P. Bagheri;D. Khachariya;R. Dalmau;
中科院分区：
文献类型：
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作者：
S. Rathkanthiwar;P. Reddy;B. Moody;Cristyan Quiñones-García;P. Bagheri;D. Khachariya;R. Dalmau;
通过Mg掺杂和成分分级，在高Al含量的AlGaN中实现了高p电导率（0.7 Ω−1 cm−1）。观察到价带和杂质带导电机制之间的明显转变。的转变温度强烈依赖于组成梯度，并在一定程度上的Mg掺杂水平。提出了一个模型来解释极化场在增强Mg掺杂梯度AlGaN薄膜的导电性和两种导电类型之间的转变的作用。这项研究提供了一个可行的途径，在AlGaN技术上有用的p型导电性。
High p-conductivity (0.7 Ω−1 cm−1) was achieved in high-Al content AlGaN via Mg doping and compositional grading. A clear transition between the valence band and impurity band conduction mechanisms was observed. The transition temperature depended strongly on the compositional gradient and to some degree on the Mg doping level. A model is proposed to explain the role of the polarization field in enhancing the conductivity in Mg-doped graded AlGaN films and the transition between the two conduction types. This study offers a viable path to technologically useful p-conductivity in AlGaN.