Complementary resistive switches for passive nanocrossbar memories
Complementary resistive switches for passive nanocrossbar memories
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DOI：
10.1038/nmat2748
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发表时间：
2010-05-01
期刊：
影响因子：
41.2
通讯作者：
Waser, Rainer
中科院分区：
文献类型：
--
作者：
Linn, Eike;Rosezin, Roland;Waser, Rainer
在迈向更高存储密度和计算机性能的道路上，能源效率的显著提高构成了未来信息技术的主要目标。忆阻元件的无源交叉阵列在十年前被建议作为非易失性随机存取存储器（RAM），并且也可以用于可重构逻辑电路（1-5）。因此，他们代表了一个有趣的替代传统的冯诺依曼为基础的计算机芯片架构。交叉开关架构具有显著降低能耗的潜力，因为它们具有最终的缩放潜力，并且因为它们允许逻辑和存储器的本地融合，从而避免了芯片上数据传输的能耗（6-8）。然而，预期的范式变化尚未发生，因为在无源交叉阵列内选择指定单元而不受通过相邻单元的潜路径电流的干扰的一般问题尚未得到令人满意的解决。这里我们介绍一种互补电阻开关。它由两个反串行忆阻元件，并允许通过解决潜路径问题结合大幅降低功耗的大型无源交叉阵列的建设。
On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) and can also be used for reconfigurable logic circuits(1-5). As such they represent an interesting alternative to the conventional von Neumann based computer chip architectures. Crossbar architectures hold the promise of a significant reduction in energy consumption because of their ultimate scaling potential and because they allow for a local fusion of logic and memory, thus avoiding energy consumption by data transfer on the chip(6-8). However, the expected paradigm change has not yet taken place because the general problem of selecting a designated cell within a passive crossbar array without interference from sneak-path currents through neighbouring cells has not yet been solved satisfactorily. Here we introduce a complementary resistive switch. It consists of two antiserial memristive elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption.