Wavelength-tunable entangled photons from silicon-integrated III-V quantum dots.
Wavelength-tunable entangled photons from silicon-integrated III-V quantum dots.
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DOI：
10.1038/ncomms10387
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发表时间：
2016-01-27
影响因子：
16.6
通讯作者：
Schmidt OG
中科院分区：
文献类型：
--
作者：
Chen Y;Zhang J;Zopf M;Jung K;Zhang Y;Keil R;Ding F;Schmidt OG
许多量子信息应用依赖于难以区分的偏振纠缠光子源。半导体量子点是确定性纠缠光子源的主要候选者之一；然而，由于它们的随机生长性质，不可能找到发射相同波长的纠缠光子的不同量子点。因此，波长可调性已成为许多设想应用的基本要求，例如，通过纠缠交换嵌套不同的点以及将点与空腔/原子连接。在这里，我们报道了从片上集成的InAs/GaAs量子点产生波长可调谐的纠缠光子。利用基于PMN-PT/硅微机电系统的各向异性应变工程技术，可以恢复不同激子发射波长下量子点的电子对称性。加上几百微米的占地面积，我们的器件促进了芯片上不可区分纠缠光子源的可扩展集成，从而消除了基于量子点的固态量子信息平台的主要障碍。纠缠光子的确定性源对光子量子网络很重要，但许多应用只有在其波长可调时才有可能实现。在这里，作者使用片上应变工程，用硅集成的InAs/GaAs量子点来演示这种源。
Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms. Deterministic sources of entangled photons are important for photonic quantum networks, but many applications are only possible when their wavelengths are tunable. Here, the authors use on-chip strain engineering to demonstrate such a source with silicon-integrated InAs/GaAs quantum dots.