Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
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DOI：
10.1063/1.4903190
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发表时间：
2014-11
影响因子：
4
通讯作者：
Takehiro Yamaguchi;R. Moriya;Y. Inoue;Sei Morikawa;S. Masubuchi;Kenji Watanabe;T. Taniguchi;T. Machida
中科院分区：
文献类型：
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作者：
Takehiro Yamaguchi;R. Moriya;Y. Inoue;Sei Morikawa;S. Masubuchi;Kenji Watanabe;T. Taniguchi;T. Machida
本文展示了高品质的隧道势垒特性和层数控制隧道电阻的过渡金属二硫属化物（TMD）测量只有几个单层的厚度。在石墨烯/TMD/金属异质结构中的WS 2和MoS 2 TMD中的垂直输运的研究表明，当WS 2的厚度在2和5个单层之间时，WS 2表现出隧道势垒特性，而MoS 2在相同范围内随着厚度的增加经历从隧穿到电子发射输运的转变。因此，石墨烯/WS 2/金属异质结构中的隧道电阻随着WS 2层的数量呈指数增加，揭示WS 2的隧道势垒高度为0.37 eV。
This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 and 5 monolayers, whereas MoS2 experiences a transition from tunneling to thermionic emission transport with increasing thickness within the same range. Tunnel resistance in a graphene/WS2/metal heterostructure therefore increases exponentially with the number of WS2 layers, revealing the tunnel barrier height of WS2 to be 0.37 eV.