Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films
Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films
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DOI：
10.1063/1.3518484
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发表时间：
2010-11
影响因子：
4
通讯作者：
Danyang Wang;N. Y. Chan;S. Li;S. Choy;H. Tian;H. Chan
中科院分区：
文献类型：
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作者：
Danyang Wang;N. Y. Chan;S. Li;S. Choy;H. Tian;H. Chan
研究了掺杂对在CaRuO 3电极（LaAlO 3）0.3（Sr 2AlTaO 6）0.35（001）衬底上外延生长的准同型相界（Bi0.5Na0.5）0.94Ba0.06TiO3薄膜电学性能的影响。La+Ce共掺杂薄膜的铁电性和压电性都得到了显著的增强，其反射极化强度Pr为29.5 μC/cm ~ 2，反射压电系数d33，f为31 pm/V，而Mn掺杂更有利于降低漏电流两个数量级。两种掺杂薄膜均表现出类似二极管的I-V特性，这与电阻开关效应有关。
Doping effects with respect to the electrical properties of morphotropic phase boundary (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films epitaxially grown on CaRuO3 electroded (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization Pr of 29.5 μC/cm2 and a remanent piezoelectric coefficient d33,f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect.