Unravelling the role of the interface for spin injection into organic semiconductors
Unravelling the role of the interface for spin injection into organic semiconductors
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DOI：
10.1038/nphys1688
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发表时间：
2010-08-01
期刊：
影响因子：
19.6
通讯作者：
Fert, Albert
中科院分区：
文献类型：
--
作者：
Barraud, Clement;Seneor, Pierre;Fert, Albert
有机材料因其预期的长自旋寿命而在制造自旋电子器件方面具有吸引力。此外，通过改变它们的组成和分子结构来控制它们的性质的能力使它们比无机材料更容易适应特定的任务。然而，大多数候选有机自旋电子学材料的研究都集中在它们的体自旋输运特性上。在这里，我们研究了同样重要的自旋注入过程，以及界面耦合对原型有机半导体Alq(3)的影响。我们制备了纳米级的(La，Sr)MnO_3/Alq(3)/Co磁性隧道结，其磁阻响应高达300%。此外，我们还发展了一个自旋输运模型，该模型描述了界面自旋相关的金属/分子杂化对注入自旋增强甚至符号反转的有效极化的作用。我们希望这些洞见将导致金属/有机界面的分子水平工程，以量身定做自旋注入，并为自旋电子器件带来新的电气功能。
Organic materials are attractive for building spintronics devices owing to their expected long spin lifetimes. Moreover, the ability to control their properties by changing their composition and molecular structure makes them easier to tailor to given tasks than inorganic materials. However, most studies of candidate organic spintronics materials focus on their bulk spin transport characteristics. Here we investigate the equally important process of spin injection and how it is influenced by interface coupling in the prototype organic semiconductor, Alq(3). We fabricate nanometre-scale (La, Sr) MnO3/Alq(3)/Co magnetic tunnel junctions that exhibit a magnetoresistive response of up to 300%. Furthermore, we develop a spin transport model that describes the role of interfacial spin-dependent metal/molecule hybridization on the effective polarization allowing enhancement and even sign reversal of injected spins. We expect such insights to lead towards the molecular-level engineering of metal/organic interfaces to tailor spin injection and bring new electrical functionalities to spintronics devices.