Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions
Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions
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DOI：
10.1063/1.3536482
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发表时间：
2011-01-10
影响因子：
4
通讯作者：
Robertazzi, R. P.
中科院分区：
文献类型：
--
作者：
Worledge, D. C.;Hu, G.;Robertazzi, R. P.
使用 Ta 垂直棒 CoFeB 垂直棒 MgO 自由层和合成反铁磁体参考层研究垂直磁隧道结中的自旋扭矩切换。我们证明 Ta 垂直棒 CoFeB 界面对垂直各向异性做出了关键贡献。报告了在施加场和电压下切换的准静态相图。获得低开关电压V-c(50)(ns)＝290mV，在自旋扭矩磁性随机存取存储器所需的范围内。据报道，开关速度降低至 1 ns，开关速度因过驱动增加而提高，是同类平面内器件的八倍，这与单域模型的预期一致。 (C) 2011 年美国物理研究所。 [doi:10.1063/1.3536482]
Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta vertical bar CoFeB vertical bar MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta vertical bar CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, V-c (50) (ns)=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3536482]