Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
复制标题
高注入InGaN基发光二极管的有限辐射复合率对晶格温度的依赖性
DOI：
10.1088/1674-1056/ab790a
复制
发表时间：
2020
影响因子：
1.7
通讯作者：
Jiang Feng-Yi
中科院分区：
文献类型：
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作者：
Gao Jiang-Dong;Zhang Jian-Li;Quan Zhi-Jue;Liu Jun-Lin;Jiang Feng-Yi
观察到InGaN基发光二极管的辐射复合速率随晶格温度的升高而减小。晶格温度对辐射复合速率的影响在高注入时趋于稳定。因此，即使在相同的晶格温度下，随着载流子浓度的增加，量子阱中的辐射复合速率也应该有一个上限。提出了一种改进的、易于使用的ABC模型。它描述了辐射复合速率的斜率逐渐减小到零，并在较小的晶格温度升高范围内进一步达到负值。这为理解InGaN基发光二极管的辐射复合速率与晶格温度和载流子浓度的关系提供了新的视角。
It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing. The effect of lattice temperature on the radiative recombination rate tends to be stable at high injection. Thus, there should be an upper limit for the radiative recombination rate in the quantum well with the carrier concentration increasing, even under the same lattice temperature. A modified and easily used ABC-model is proposed. It describes that the slope of the radiative recombination rate gradually decreases to zero, and further reaches a negative value in a small range of lattice temperature increasing. These provide a new insight into understanding the dependence of the radiative recombination rate on lattice temperature and carrier concentration in InGaN-based light-emitting diode.
影响因子：
--
作者：
T. Seong;Jung Han;H. Amano;H. Morkoç
通讯作者：
T. Seong;Jung Han;H. Amano;H. Morkoç