S. Kobayashi,: ""Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"," The 9th International Conference on Vapor Growth & Epitaxy. 116 (1996)
S. Kobayashi,: ""Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"," The 9th International Conference on Vapor Growth & Epitaxy. 116 (1996)
复制标题
S. Kobayashi,:“使用锗气体的 LPCVD 中硅上锗的初始生长特性”,第九届国际气相生长会议
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: