Parameter optimization of surface activation on silicon wafer
Parameter optimization of surface activation on silicon wafer
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硅片表面活化参数优化
DOI：
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发表时间：
2011
影响因子：
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通讯作者：
Liao, Guang-Lan
中科院分区：
文献类型：
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作者：
Nie, Lei;Ruan, Chuan-Zhi;Shi, Tie-Lin;Liao, Guang-Lan
【摘要】：通过正交实验考察了单晶硅片表面活化过程中重要工艺参数的影响,并对活化工艺进行了优化。选取活化液体积比、处理时间和温度三个参数作为研究对象,根据表面活化工艺的特点,以30%盐水为测试溶液,通过接触角测量实验的方法估算了这些参数对表面活化的影响。实验结果分析表明,三个参数中,活化温度与表面活化的关系最为密切。优化后的工艺用于硅直接键合，键合实验结果表明，该工艺可以实现无空隙键合。
The effects of important process parameters in surface activation of monocrystal silicon wafer were investigated by orthogonal experiments and the activation process was optimized.The three parameters,volume ratio of activation solution,processing time and temperature,were selected as investigation objects.Based on the characters of surface activation process,the influences on surface activation of these parameters were estimated by the means of contact angle measurement experiments and 30% salt water was the testing solution.The experimental results were analyzed which showed that among the three parameters,activation temperature had the most intimate relationship with surface activation result.And the volume ratio of activation solution had more obvious effect than processing time.This optimized process was used in silicon direct bonding and the results of bonding experiment indicated the void-free bonding could be realized by this process.