Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect
Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect
复制标题
单层硼烯电极可有效消除肖特基势垒和强电场效应
DOI：
10.1063/1.4960768
复制
发表时间：
2016-08-08
影响因子：
4
通讯作者：
Wu, X. L.
中科院分区：
文献类型：
--
作者：
Liu, L. Z.;Xiong, S. J.;Wu, X. L.
二维半导体与传统金属电极之间形成的肖特基势垒极大地限制了二维半导体在纳米电子和光电子器件中的应用。在这项研究中，金属硼化物被用来作为传统的贵金属电极接触的二维半导体的替代品。理论计算表明，硼化物/二维半导体异质结中不存在肖特基势垒。即使施加强电场，接触也保持欧姆性。这一发现提供了一种构建具有大大增强的性能的2D电子设备和传感器的方法。
The formation of Schottky barriers between 2D semiconductors and traditional metallic electrodes has greatly limited the application of 2D semiconductors in nanoelectronic and optoelectronic devices. In this study, metallic borophene was used as a substitute for the traditional noble metal electrode to contact with the 2D semiconductor. Theoretical calculations demonstrated that no Schottky barrier exists in the borophene/2D semiconductor heterostructure. The contact remains ohmic even with a strong electric field applied. This finding provides a way to construct 2D electronic devices and sensors with greatly enhanced performance.