Thermal detection of single e-h pairs in a biased silicon crystal detector
Thermal detection of single e-h pairs in a biased silicon crystal detector
复制标题
偏置硅晶体探测器中单个 e-h 对的热探测
DOI：
10.1063/1.5010699
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发表时间：
2017
影响因子：
4
通讯作者：
Betty A. Young
中科院分区：
文献类型：
--
作者：
R. Romani;P. Brink;B. Cabrera;M. Cherry;T. Howarth;N. Kurinsky;R. Moffatt;R. Partridge;F. Ponce;M. Pyle;A. Tomada;S. Yellin;J. Yen;Betty A. Young
我们证明了在1 cm~2的4 mm厚的硅晶体(0.93 g)中，单个电子-空穴对可以在∼35 mK工作。探测器的一侧被图案化为两个准粒子陷阱辅助的电热反馈跃迁边缘传感器阵列，保持在地电位附近。另一侧包含20%覆盖率的偏置栅格。在本工作中使用了高达 ±160 V的偏压。光纤提供650 nm(1.9 eV)的光子，每个光子在靠近栅格的晶体中产生一个电子-空穴(e-h+)对。漂移电荷的能量是用声子传感器噪声σ∼0.09e-h+对测量的。观察到的电荷量子化对于h+S或e-S输运到晶体上几乎相同。
We demonstrate that individual electron-hole pairs are resolved in a 1 cm2 by 4 mm thick silicon crystal (0.93 g) operated at ∼35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e– h+) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise σ ∼0.09 e– h+ pair. The observed charge quantization is nearly identical for h+s or e–s transported across the crystal.