Back-Side Readout Silicon Photomultiplier.
Back-Side Readout Silicon Photomultiplier.
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DOI：
10.1109/ted.2012.2200684
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发表时间：
2012-07-19
影响因子：
3.1
通讯作者：
Holland SE
中科院分区：
文献类型：
--
作者：
Choong WS;Holland SE
提出了一种新型背读出硅光电倍增管（SiPM）结构。当前SiPM是具有前侧读出的前照射结构，其具有相对小的几何填充因子，导致其光子检测效率（PDE）的劣化。背侧读出装置将提供实现高PDE的有利解决方案。我们设计并研究了一种新的结构，该结构允许背面读出，同时创建针对雪崩击穿优化的高电场区域。此外，该结构具有相对高的填充因子，并且还允许将SiPM的各个微单元直接耦合到专用集成电路。我们将讨论的性能，可以通过这种结构，通过器件模拟和工艺流程，可以用来制造这种结构，通过工艺模拟。
We present a novel structure for the back-side readout silicon photomultipler (SiPM). Current SiPMs are front-illuminated structures with front-side readout, which have relatively small geometric fill factor leading to degradation in their photon detection efficiency (PDE). Back-side readout devices will provide an advantageous solution to achieve high PDE. We designed and investigated a novel structure that would allow back-side readout while creating a region of high electric field optimized for avalanche breakdown. In addition, this structure has relatively high fill factor and also allow direct coupling of individual micro-cell of the SiPM to application-specific integrated circuits. We will discuss the performance that can be attained with this structure through device simulation and the process flow that can be used to fabricate this structure through process simulation.