The effect of Zn1‐xMgxO buffer layer deposition temperature on Cu(In,Ga)Se2 solar cells: A study of the buffer/absorber interface
The effect of Zn1‐xMgxO buffer layer deposition temperature on Cu(In,Ga)Se2 solar cells: A study of the buffer/absorber interface
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Zn1-xMgxO缓冲层沉积温度对Cu(In,Ga)Se2太阳能电池的影响：缓冲/吸收剂界面的研究
DOI：
10.1002/pip.859
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
M. Edoff
中科院分区：
文献类型：
--
作者：
T. Törndahl;E. Coronel;A. Hultqvist;C. Platzer‐Björkman;K. Leifer;M. Edoff
评价了Zn1‐xMgxO缓冲层原子层沉积温度对Cu(In,Ga)Se2 （CIGS）基太阳能电池器件的影响。以二乙基锌、双环戊二烯基镁和水为前驱体，在105 ~ 180℃的温度范围内生长Zn1‐xMgxO薄膜。在105°C至135°C的区域生产高效设备。在120°C的Zn1 - xMgxO沉积温度下，使用x值为0.2、厚度为140 nm的Zn1 - xMgxO层，电池效率最高可达15.5%。由于开路电压和填充因子的巨大损失，在150°C以上的温度下生长的器件的电池效率显著下降。除了在105°C和120°C制备的样品在缓冲液/吸收剂界面上显示元素硒外，样品的化学组成、结构和形貌没有观察到差异。界面处的硒不会导致太阳能电池装置效率的严重下降。相反，在150°C以上的生长温度下，Zn1 - xMgxO电阻率下降了一个数量级以上，这可以解释太阳能电池性能的下降。通过能量过滤透射电子显微镜，发现CIGS/Zn1‐xMgxO化学界面的宽度小于10 nm，没有任何Cu， Se， Zn和o的损耗区域。Copyright©2008 John Wiley & Sons, Ltd。
The effect of atomic layer deposition temperature of Zn1‐xMgxO buffer layers for Cu(In,Ga)Se2 (CIGS) based solar cell devices is evaluated. The Zn1‐xMgxO films are grown using diethyl zinc, bis‐cyclopentadienyl magnesium and water as precursors in a temperature range of 105 to 180°C. High efficiency devices are produced in the region from 105 up to 135°C. At a Zn1‐xMgxO deposition temperature of 120°C, a maximum cell efficiency of 15·5% is reached by using a Zn1‐xMgxO layer with an x‐value of 0·2 and a thickness of 140 nm. A significant drop in cell efficiency due to large losses in open circuit voltage and fill factor is observed for devices grown at temperatures above 150°C. No differences in chemical composition, structure and morphology of the samples are observed, except for the samples prepared at 105 and 120°C that show elemental selenium present at the buffer/absorber interface. The selenium at the interface does not lead to major degradation of the solar cell device efficiency. Instead, a decrease in Zn1‐xMgxO resistivity by more than one order of magnitude at growth temperatures above 150°C may explain the degradation in solar cell performance. From energy filtered transmission electron microscopy, the width of the CIGS/Zn1‐xMgxO chemical interface is found to be thinner than 10 nm without any areas of depletion for Cu, Se, Zn and O. Copyright © 2008 John Wiley & Sons, Ltd.