In‐plane epitaxial alignment of YBa2Cu3O7−x films grown on silver crystals and buffer layers
In‐plane epitaxial alignment of YBa2Cu3O7−x films grown on silver crystals and buffer layers
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在银晶体和缓冲层上生长的 YBa2Cu3O7−x 薄膜的面内外延排列
DOI：
10.1063/1.109565
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发表时间：
1993
影响因子：
4
通讯作者：
B. Chao
中科院分区：
文献类型：
--
作者：
J. Budai;R. Young;B. Chao
采用激光烧蚀方法在单晶表面生长了YBa2Cu3O7-−x(YBCO)超导薄膜。X射线衍射测量表明，在所有情况下，薄膜都是相对于衬底的晶轴沿特定的面内外延取向排列的。观察到的取向与YBCO-Ag界面的近重合格点模型的预测是一致的。这种实现三维薄膜对准的技术被扩展到包括在云母上的银外延缓冲层来代替大块的银晶体。金属衬底和缓冲层上的平面外延取向对于抑制高角度晶界引起的弱连接行为具有重要的实际应用意义。
Superconducting YBa2Cu3O7−x (YBCO) films were grown by laser ablation on Ag(001), Ag(110), and Ag(111) single‐crystal surfaces. X‐ray diffraction measurements showed that, in all cases, the films were aligned with specific in‐plane epitaxial orientation with respect to the crystallographic axes of the substrate. The observed orientations were consistent with predictions of near‐coincident site lattice models of the YBCO‐Ag interface. This technique for achieving three‐dimensional film alignment was extended to include a Ag epitaxial buffer layer on mica in place of a bulk Ag crystal. In‐plane epitaxial alignment on metal substrates and buffer layers has important consequences in practical applications for inhibiting weak‐link behavior caused by high‐angle grain boundaries.