Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells
Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells
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DOI：
10.1143/jjap.48.101603
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发表时间：
2009-10
影响因子：
1.5
通讯作者：
J. Sritharathikhun;Fangdan Jiang;S. Miyajima;A. Yamada;M. Konagai
中科院分区：
文献类型：
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作者：
J. Sritharathikhun;Fangdan Jiang;S. Miyajima;A. Yamada;M. Konagai
采用甚高频等离子体增强化学气相沉积（60 MHz VHF-PECVD）在约[200 °C]的低衬底温度下沉积的宽禁带、高电导率p型氢化微晶氧化硅（p-µc-SiO：H）薄膜用作n型晶体硅（n-c-Si）异质结（HJ）太阳能电池的窗口层。我们通过改变沉积时间和硅烷（SiH 4）流速研究了p-µc-SiO：H窗口层厚度对HJ太阳能电池的影响。研究了CO2流量对p-µc-SiO：H窗口和i-a-SiO：H缓冲层的影响。采用p-µc-SiO：H/i-a-SiO：H/n-c-Si [Czochralski（CZ），200 µm，（100）]/i-a-Si：H/n-a-Si：H配置，我们实现了17.8%的效率（有源区效率），开路电压（Voc）为665 mV。太阳能电池在400 nm波长处显示出约0.83的光谱响应，这高于具有非晶硅窗口层的常规HJ太阳能电池的光谱响应。
Wide-gap, high-conductivity p-type hydrogenated microcrystalline silicon oxide (p-µc-SiO:H) films deposited by very high frequency plasma-enhanced chemical vapor deposition (60 MHz VHF-PECVD) at a low substrate temperature of approximately [200 °C] were used as window layers in n-type crystalline silicon (n-c-Si) heterojunction (HJ) solar cells. We investigated the effect of p-µc-SiO:H window layer thickness on HJ solar cells by changing deposition time and silane (SiH4) flow rate. The effects of carbon dioxide flow rate on the p-µc-SiO:H window and i-a-SiO:H buffer layer were also studied. Employing a p-µc-SiO:H/i-a-SiO:H/n-c-Si [Czochralski (CZ), 200 µm, (100)]/i-a-Si:H/n-a-Si:H configuration, we achieved an efficiency of 17.8% (active area efficiency) with an open-circuit voltage (Voc) of 665 mV. The solar cells showed a spectral response of about 0.83 at a wavelength of 400 nm, which is higher than that of conventional HJ solar cells with amorphous silicon window layers.