Excitation of intra-4f shell luminescence of Yb3+ by energy transfer from Si nanocrystals
Excitation of intra-4f shell luminescence of Yb3+ by energy transfer from Si nanocrystals
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DOI：
10.1063/1.122688
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发表时间：
1998-11-23
影响因子：
4
通讯作者：
Yamamoto, K
中科院分区：
文献类型：
--
作者：
Fujii, M;Hayashi, S;Yamamoto, K
制备了含有Si纳米晶(nc-Si)和Yb的SiO2薄膜并研究了它们的光致发光(PL)性能。对于平均直径为 3.1 nm 的 nc-Si 样品，在 nc-Si 的宽峰（类似于 1.4 eV）的低能侧可以观察到归因于 Yb3+ 的 4f 壳层内跃迁的弱峰（类似于 1.26 eV）。发现 1.26 eV 峰的强度强烈依赖于 nc-Si 的尺寸，并随着尺寸的减小而迅速增加。研究了 PL 光谱的温度依赖性。发现1.26eV峰的温度猝灭程度取决于nc-Si的尺寸并且随着尺寸减小而变小。这些结果表明，量子尺寸效应导致的 nc-Si 带隙加宽对于 nc-Si 有效激发 Yb3+ 至关重要。 (C) 1998 年美国物理研究所。
SiO2 films containing Si nanocrystals (nc-Si) and Yb were prepared and their photoluminescence (PL) properties were studied. For the sample containing nc-Si with an average diameter of 3.1 nm, a weak peak (similar to 1.26 eV) attributable to the intra-4f shell transition of Yb3+ could be observed at the low-energy side of a broad peak (similar to 1.4 eV) of nc-Si. The intensity of the 1.26 eV peak was found to depend strongly on the size of nc-Si and increase rapidly with decreasing size. The temperature dependence of the PL spectra was studied. It was found that the degree of temperature quenching of the 1.26 eV peak depends on the size of the nc-Si and becomes small as the size decreases. These results suggest that the band-gap widening of nc-Si due to the quantum size effects is essential to efficiently excite Yb3+ by nc-Si. (C) 1998 American Institute of Physics.