Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
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掺硼超纳米晶金刚石/氢化非晶碳复合薄膜的电学性能
DOI：
10.1007/s00339-019-2607-8
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Yoshitake Tsuyoshi
中科院分区：
文献类型：
--
作者：
Katamune Yuki;Takeichi Satoshi;Ohtani Ryota;Koizumi Satoshi;Ikenaga Eiji;Kamitani Kazutaka;Sugiyama Takeharu;Yoshitake Tsuyoshi
以掺硼石墨为靶材，采用同轴电弧等离子体沉积技术制备了含硼超晶金刚石/氢化非晶碳复合材料（UNCD/a-C:H）薄膜。用硬x射线光电子能谱研究了硼掺杂对薄膜电性能的影响。它们的电导率从10−7增加到10−1Ω−1cm−1，硼含量增加到5%。从电导率的温度依赖性来看，硼原子局域态产生的跳变传导在载流子输运中占主导地位。x射线光电子能谱显示，随着硼含量的增加，费米能级向价带顶端移动。这表明薄膜中的硼原子导致形成局域态，从而提高了导电性。
Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray photoelectron spectroscopy. Their electrical conductivity increased from 10−7to 10−1Ω−1cm−1with increasing boron content up to 5 at.%. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity.