Carrier and phonon transport control by domain engineering for high-performance transparent thin film thermoelectric generator
Carrier and phonon transport control by domain engineering for high-performance transparent thin film thermoelectric generator
复制标题
高性能透明薄膜热电发电机载流子和声子输运的领域工程控制
DOI：
10.1063/5.0048577
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发表时间：
2021-04-12
影响因子：
4
通讯作者：
Nakamura, Yoshiaki
中科院分区：
文献类型：
--
作者：
Ishibe, Takafumi;Tomeda, Atsuki;Nakamura, Yoshiaki
我们开发透明的外延SnO 2薄膜具有低热导率和高载流子迁移率域工程使用具有低对称性的衬底：有意控制的域的大小和晶体域之间的缺陷密度。在r-Al_2 O_3（低对称性衬底）上外延的SnO_2薄膜的迁移率比在c-Al_2 O_3（高对称性衬底）上外延的SnO_2薄膜的迁移率高一倍，从而导致在r-Al_2 O_3上外延的SnO_2薄膜的热电功率因数高一倍。这种迁移率差异可能归因于晶畴之间的缺陷密度。此外，两种样品表现出几乎相同的热导率（类似于5.1 +/- 0.4W m（-1）K-1的SnO 2/r-Al 2 O 3样品和类似于5.5 +/- 1.0W m（-1）K-1的SnO 2/c-Al 2 O 3样品），因为它们的域尺寸几乎相同。由畴工程SnO 2薄膜构成的单腿式薄膜热电发电器在温差为20 K时产生的最大功率密度接近54 μ W m（-2）。这表明，基于领域工程的透明薄膜热电发电器有希望在我们的人类社会中运行一些物联网传感器。
We develop transparent epitaxial SnO2 films with low thermal conductivity and high carrier mobility by domain engineering using the substrates with low symmetry: intentional control of the domain size and the defect density between crystal domains. The epitaxial SnO2 films on r-Al2O3 (a low symmetry substrate) exhibit a twice higher mobility than the epitaxial SnO2 films on c-Al2O3 (a high symmetry substrate), resulting in twice larger thermoelectric power factor in the SnO2 films on r-Al2O3. This mobility difference is likely attributed to the defect density between crystal domains. Furthermore, both samples exhibit almost the same thermal conductivities (similar to 5.1 +/- 0.4W m(-1) K-1 for SnO2/r-Al2O3 sample and similar to 5.5 +/- 1.0W m(-1) K-1 for SnO2/c-Al2O3 sample), because their domain sizes are almost the same. The uni-leg type film thermoelectric power generator composed of the domain-engineered SnO2 film generates the maximum power density of similar to 54 mu W m(-2) at the temperature difference of 20K. This demonstrates that a transparent film thermoelectric power generator based on the domain engineering is promising to run some internet of things sensors in our human society.