Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor
Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor
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DOI：
10.1103/physrevb.105.195308
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发表时间：
2022-05
影响因子：
3.7
通讯作者：
T. Naito;R. Nishimura;M. Yamada;A. Masago;Y. Shiratsuchi;Y. Wagatsuma;K. Sawano;R. Nakatani;T. Oguchi;K. Hamaya
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文献类型：
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作者：
T. Naito;R. Nishimura;M. Yamada;A. Masago;Y. Shiratsuchi;Y. Wagatsuma;K. Sawano;R. Nakatani;T. Oguchi;K. Hamaya
利用横向自旋阀(LSV)器件中的受控铁磁(FM)-半导体(SC)界面，实验研究了FM-SC异质结中界面自旋矩对SC自旋输运的影响。第一性原理计算预测，通过在FM和Sc之间插入三维过渡金属V、Cr或Cu原子层，可以显著地降低Fm-Sc结的自旋矩fi。当全外延FM-SC肖特基隧道接触0时。4-0。fi发现，FM-SC LSV器件中的自旋信号在8K时显著降低，当我们通过插入fi0来增加界面自旋矩时，自旋信号显著地减小。在FM和Sc之间的3 nm厚的Co层中，8K时的自旋信号再次得到显著的fi增强。通过这些实验，我们得出结论，即使在基于SC的自旋电子器件中，FM-SC界面的界面自旋矩也是获得大自旋信号的重要因素之一。
Using controlled ferromagnet (FM) -semiconductor (SC) interfaces in SC-based lateral spin-valve (LSV) devices, we experimentally study the effect of interfacial spin moments in FM–SC heterojunctions on spin transport in SC. First-principles calculations predict that the spin moment of FM–SC junctions can be artificially reduced by inserting 3 d transition metal V, Cr, or Cu atomic layers between FM and SC. When all-epitaxial FM–SC Schottky-tunnel contacts with a 0 . 4–0 . 5-nm-thick V, Cr, or Cu interfacial layer are formed, we find that the spin signals in FM–SC LSV devices are significantly decreased at 8 K. When we increase the interfacial spin moment by inserting an ∼ 0 . 3-nm-thick Co layer between FM and SC, the spin signals at 8 K are significantly enhanced again. From these experiments, we conclude that the interfacial spin moments at FM–SC interfaces are one of the important factors to achieve large spin signals even in SC-based spintronic devices.